- Cumhuriyet Üniversitesi Fen-Edebiyat Fakültesi Fen Bilimleri Dergisi
- Vol: 36 Issue: 7
- SAFSIZLIK DÜZEYLERİ ARASINDAKİ KIZILÖTESİ GEÇİŞLER ÜZERİNE ELEKTRİK ALAN ETKİSİ
SAFSIZLIK DÜZEYLERİ ARASINDAKİ KIZILÖTESİ GEÇİŞLER ÜZERİNE ELEKTRİK ALAN ETKİSİ
Authors : Fatih Ungan, Emre Bahadır Al, Yunus Emre Yıldız
Pages : 153-173
Doi:10.17776/csj.04150
View : 18 | Download : 5
Publication Date : 2015-12-31
Article Type : Other
Abstract :Abstract .In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation. Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductorsKeywords :