Ionizing Radiations and Annealing Influence on MOSFET Charge States

Authors : Zainabidinov Ciragiddin, Atamuratov Atabek, Ysupov Akhmed

Pages : 485-492

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Publication Date : 9999-12-31

Article Type : Makaleler

Abstract :The threshold voltage shift D VT and its components due to trapped-oxide charges D VNot and Si-SiO2 interface traps D VN in MOSFET exposed to Bremsstrahlung, Co60 irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO2 interface traps by annealing. The mechanism is based on previously available models.
Keywords : Turk. J. Phys., 23, (1999), 485-492. Full text: pdf Other articles published in the same issue: Turk. J. Phys., vol.23, iss.3.