An Investigation of Electrical Properties of Porous Silicon

Authors : G. Algün, M. Ç. Arikan

Pages : 789-798

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Publication Date : 9999-12-31

Article Type : Makaleler

Abstract :In this work, electrical properties of porous silicon structures, formed with electrochemical anodization in HF acid solution under two different current densities, were investigated. In these experiments, Sb doped (111)-oriented n-type silicon samples with 0.006-0.015 W cm resistivity was used. Samples were anodized in a solution of 38% HF and 99% C2H2OH at 1:1 ratio for 15 minutes. After anodization, the structures that formed at low current density (J = 5 mA/cm2) was compared with structures that formed at high current density (J = 30 mA/cm2). Both structures and electrical properties were investigated.
Keywords : Turk. J. Phys., 23, (1999), 789-798. Full text: pdf Other articles published in the same issue: Turk. J. Phys., vol.23, iss.4.