Some Physical Properties of g Irradiated Gex(As2Te3)100 - x Chalcogenide System

Authors : Afaf Abdel-aal, Bahiga Abdel-hameed Mansour, Hoda Mohamed Eissa

Pages : 223-232

View : 13 | Download : 5

Publication Date : 9999-12-31

Article Type : Makaleler

Abstract :The effect of g -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Gex(As2Te3)100 - x (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the g -doses increase, the values of the allowed indirect optical energy gap Eopt for the different compositions decreases and the tail energy width increases.
Keywords : Chalcogenide-glasses, gamma-ray effects, visible-spectra, radiative-electrical-optical-properties, gamma-irradiation, transmission-edge-shift, defect-formation.