The Thin Film Phototransistor Cell with Silver Interfacial Layer

Authors : Ikram Orak

Pages : 1-5

View : 17 | Download : 8

Publication Date : 2019-12-31

Article Type : Research

Abstract :In the present study, the silver (Ag) metal particle was used between two insulating layers to fabricated zinc-oxide (ZnO) thin film transistor. The Ag metal was evaporated with thermal systems. The dielectric materials such as Al 2 O 3 and HfO 2 were deposited atomic layer deposition (ALD) technique. In order to beter understand the device operation and Ag layer on charge trapping layer, the some electrical characteristics such as I on /I off ratio, threshold voltage (Vth) were calculated with some different current-voltage (I-V) measurements. These values are found to be 1.1x10 3 and 2.1 V, respectively. The I DS -V DS measurements were repeated 20 times to investigate the memory effect of Ag material at the interface layer. This measurement shown that the hysterisis of memory window did not decreased. In addition these measurements, the transistor's response was measured to light by taking I DS -V DS measurements in the dark and under light. This device has been found to be photosensitive. These results shown that the ZnO thin film transistor can be used flash memory technology and photovoltaic device applications.
Keywords : Phototransistor, Thin film transistor, Silver