- Mehmet Akif Ersoy Üniversitesi Fen Bilimleri Enstitüsü Dergisi
- Vol: 2 Issue: 1
- Alttaş sıcaklığının expanding thermal plazma yöntemi ile elde edilen a-Si:H filmlerin optik ve elekt...
Alttaş sıcaklığının expanding thermal plazma yöntemi ile elde edilen a-Si:H filmlerin optik ve elektriksel özellikleri üzerine etkisi
Authors : Tayyar Güngör, Guy J. Adriaenssens
Pages : 40-49
View : 8 | Download : 4
Publication Date : 2011-06-01
Article Type : Research
Abstract :Optical properties and dark current activation energy of hydrogenated amorphous silicon (a,Si:H) produced by the expanding thermal plasma chemical vapour deposition (ETPCVD) technique are investigated as a function of substrate temperature in the 150,500°C temperature range. The optical transmission spectra were used to obtain the thickness, refractive index, and optical band gap of the a, Si:H films. It is observed that while the refractive index is increasing with substrate temperature, the optical band gap and deposition rate, as well as the dark conductivity activation energy, are decreasing.Keywords : Hydrogenated amorphous silicon, solar cell, optical parameters, optical transmittance.