- Karadeniz Fen Bilimleri Dergisi
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- Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure
Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure
Authors : Ahmet BİLGİLİ, Ömer AKPINAR, Naki KAYA, Mustafa ÖZTÜRK
Pages : 1377-1385
Doi:10.31466/kfbd.1276114
View : 49 | Download : 39
Publication Date : 2023-12-15
Article Type : Research
Abstract :In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.Keywords : GaN, HEMT, AlGaN, QMSA, Hall, Mobilite