- Gazi Mühendislik Bilimleri Dergisi
- Cilt: 9 Sayı: 3
- New FinFet Transistor Implementation of Floating and Grounded Inductance Simulator Based on Active E...
New FinFet Transistor Implementation of Floating and Grounded Inductance Simulator Based on Active Elements.
Authors : Huseyin Demirel, Arsen Ahmed
Pages : 647-653
View : 34 | Download : 67
Publication Date : 2024-01-01
Article Type : Research
Abstract :This research presents a new Finfet transistor that utilizes current mode active device technology to construct a floating and grounded inductance simulator. In this work, the grounded inductance circuit (GIC) uses only two Z-copy current follower transconductance amplifiers (Zc-CFTA’s) and one grounded capacitor, and the floating inductance circuit (FIC) in the suggested simulator uses just three Z-copy current follower transconductance amplifiers (ZC-CFTA’s) as active elements with only single grounded capacitor as an active inductor simulation. The aim of this work is to realize an active inductance simulator with only one capacitor, which is commercially available as an active building block (ABB). In addition, the designed circuit shows low incremental active and passive hypersensitivity and non-interactive electronic control of the quality factor (Q) and natural angle frequency (w0). Through computer simulation results with a fourth-order Butterworth band-pass filer used LT-spice and cadence virtuoso program with 7nm process parameter, the suggested circuits\' performances were assessed.Keywords : Finfet transistor, floating and grounded inductance simulator, Z-copy CFTA (ZC-CFTA).