- Cumhuriyet Üniversitesi Fen-Edebiyat Fakültesi Fen Bilimleri Dergisi
- Vol: 36 Issue: 3
- Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effe...
Designing and simulation SOI MOSFET transistorsto enhance DIBL parameterand improveself-thermal effects
Authors : Samad Ghalandari, Hossein Bahrami, Hasti Abbasi, Gholamreza Karimi
Pages : 2090-2096
View : 9 | Download : 3
Publication Date : 2015-05-13
Article Type : Review
Abstract :Abstract. In this study, a new structure for FD SOI MOSFET has been presented toimprove DIBL parameter and also to enhance self-heating effect. The main idea of this structure is to change the thickness of BOX layer in transistor in order to improve DIBL parameter and self-heating effect.Keywords : Self-Heating Effect, FD SOI MOSFET, DIBL