- Celal Bayar Üniversitesi Fen Bilimleri Dergisi
- Vol: 15 Issue: 2
- Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies
Electrical Parameters of the Erbium Oxide MOS Capacitor for Different Frequencies
Authors : Berk Morkoc, Ayşegül Kahraman, Aliekber Aktag, Ercan Yilmaz
Pages : 139-143
Doi:10.18466/cbayarfbe.460022
View : 15 | Download : 4
Publication Date : 2019-06-30
Article Type : Research
Abstract :Electrical parameters of Erbium Oxide (Er 2 O 3 ) MOS capacitors depending on frequency were investigated deeply, in this paper. Er 2 O 3 layers were deposited on p–Si substrates with (100) oriented using RF–magnetron sputtering method. The films were annealed at 500 o C in N 2 environment. C–V characteristic changes reduce with increasing frequency. G/ω–V characteristic variations show different behavior between 10–250 kHz and 250 kHz–1 MHz. It is thought that these different behaviors are caused by interface states between silicon and Er 2 O 3 layer, series resistance (R s ) effects and the relaxation time of trapped states. The R s values calculated by the C ma and G ma values at the high frequency and decrease with rising frequency. Then, C c –V and G c /ω–V characteristic curves were measured and compared to first measurements. In addition, interface state density (D it ), diffusion potential (V D ), and barrier height ( B ) were calculated and these results demonstrate similar behaviors.Keywords : Er2O3, MOS, Capacitor, Interface states, Series resistance