- Natural and Engineering Sciences
- Vol: 2 Issue: 3
- The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of...
The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter
Authors : Milaim Zabeli, Nebi Caka, Myzafere Limani, Qamil Kabashi
Pages : 135-148
Doi:10.28978/nesciences.358859
View : 6 | Download : 4
Publication Date : 2017-10-30
Article Type : Research
Abstract :The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements.Keywords : CMOS inverter, threshold voltage, voltage critical value, noise margins, transconductance parameter