- Communications Faculty of Sciences University Ankara Series A2-A3 Physical and Engineering
- Vol: 43
- Operation of bipolar and field effect transistors in radiation environments
Operation of bipolar and field effect transistors in radiation environments
Authors : Fouad A. S Soliman
Pages : 9-23
Doi:10.1501/commua1-2_0000000049
View : 8 | Download : 4
Publication Date : 1994-01-01
Article Type : Research
Abstract :An investigation of radiation damage in bipolar and field effect transistors is presented. For low frequency transistors, 90 % of the damage in forward current gain occurs at k>w y doses around 100 K. rads. On the other hand, tlıe effects on microwave transistors occur at lıigher- dosc levels up to 100 x 106 rads. The damage effect has minimum that usually corresponds to the low (0.10 mA.) and higher (300 mA) ends of the operating collector current range of a device.Keywords : Operation, Bipolar, Radiation environments