- Turkish Journal of Physics
- Vol: 22 Issue: 6
- The Determination of Thermal Annealing Effect on the DOS Profile of a-Si:H Film
The Determination of Thermal Annealing Effect on the DOS Profile of a-Si:H Film
Authors : Tülay Serin
Pages : 453-460
View : 10 | Download : 4
Publication Date : 9999-12-31
Article Type : Makaleler
Abstract :In this study the aim was to investigate the effect of thermal annealing on the density of states (DOS) of hydrogenated amorphous silicon (a-Si:H) by means of a Schottky structure. In order to realize that goal the sandwich structured Au/a-Si:H/a-Si:H(n+-type)/Cr Schottky diode was fabricated. The junction capacitance of the samples were measured as a function of the amplitude of alternating voltage in the frequency range of 500 Hz - 100 KHz and in the annealing temperature range of 23 - 175oC. The density of states profile as a function of both annealing temperature and energy were plotted. The effect of the annealing on the density of states (DOS) is discussed.Keywords : Turk. J. Phys., 22, (1998), 453-460. Full text: pdf Other articles published in the same issue: Turk. J. Phys., vol.22, iss.6.