- Turkish Journal of Physics
- Vol: 26 Issue: 6
- The Temperature Dependence of the Electronic Structure of Si d-doped GaAs
The Temperature Dependence of the Electronic Structure of Si d-doped GaAs
Authors : Emine Öztürk
Pages : 465-472
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Publication Date : 9999-12-31
Article Type : Makaleler
Abstract :We investigated theoretically the change of electronic properties of Si d-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.Keywords : d-doped GaAs, electronic structure, temperature-dependence.