- Turkish Journal of Physics
- Vol: 29 Issue: 4
- Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films
Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films
Authors : Sanjeev Kumar Sharma, Himanshu Gupta
Pages : 243-248
Doi:10.3906/sag-1206-40
View : 8 | Download : 5
Publication Date : 9999-12-31
Article Type : Makaleler
Abstract :This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm2. The room temperature photoconductivity for the same doping concentration of 10-4 (to develop H2Se/SiH4 and H2S/SiH4) is found to be higher in Se-doped -- than S-doped -- a-Si:H film due to a low defect density. From the measurement of intensity dependence of photoconductivity, it is found that the addition of Se and S changes the recombination mechanism from monomolecular, for low-doped films, to bimolecular at higher levels of doping of Se and S.Keywords : Se, S, a-Si:H, Photoconductivity, recombination mechanism.