- Turkish Journal of Physics
- Vol: 29 Issue: 6
- Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
Authors : Habibe Bayhan, Şadan Özden
Pages : 371-378
View : 12 | Download : 7
Publication Date : 9999-12-31
Article Type : Makaleler
Abstract :Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been applied to analyze the temperature dependence of the reverse current-voltage data. We suggest that Bardeen's model for a modified Schottky-like interfacial junction, that takes into account the effect of interfacial localized states, can be satisfactorily applied to describe the reverse current-voltage characteristics at bias voltages below 50 V.Keywords : BPW34, PIN, Photodiode, reverse bias, current transport.