- Turkish Journal of Physics
- Vol: 32 Issue: 4
- Optical and Structural Properties of the GaSxSe1−x, GaSe, TlGaSe2 and TlInS2 Semiconductors
Optical and Structural Properties of the GaSxSe1−x, GaSe, TlGaSe2 and TlInS2 Semiconductors
Authors : Aydın Ulubey Kulibekov
Pages : 227-234
Doi:10.3906/sag-1206-94
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Publication Date : 9999-12-31
Article Type : Makaleler
Abstract :In the present work, crystal structure and optical properties of the layered chalcogenides GaSxSe1-x, GaSe, TlGaSe2 and TlInS2 were investigated in the visible (VIS) and infrared (IR) range of spectra. Partial content of the elements were performed and the space group were determined by help of X-ray diffraction experiments. Making use of the experimental results, we have constructed a scheme of band motion for the transition from GaSe to GaS. It has been established that that the infrared active optical modes show typical two-mode behaviour. DOI: 10.1007/s10762-005-0294-3, 10.1063/1.2128694Keywords : Chalcogenides, layered semiconductors, optical properties, vibrational modes, multiphonon absorption, crystalline and band structure, correlation analysis