- Turkish Journal of Physics
- Vol: 32 Issue: 4
- Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pse...
Theoretical Study of Electronic Properties of the Semi-Conductors AlN and GaN With the Empirical Pseudopotential Method EPM
Authors : Kaddour Bencherif, Mohamed Sehil, Hamza Abid
Pages : 193-197
Doi:10.3906/sag-1210-7
View : 10 | Download : 7
Publication Date : 9999-12-31
Article Type : Makaleler
Abstract :The electronic structure of binary compounds AlN and GaN are presented. We have used the empirical pseudo-potential method. Good agreement between the calculated results and experiment is obtained. The charge densities are presented for the sum of the four valence bands of both AlN and GaN.Keywords : Empirical Pseudo-potential Method (EPM), nitride aluminium, nitride gallium compounds, III-N semi-conductors, wide band gap semi-conductors, energy gap, charge density