- Journal of Nuclear Sciences
- Vol: 2 Issue: 2
- Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors
Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors
Authors : Ş. KAYA, E. YILMAZ, A. ÇETİNKAYA
Pages : 48-52
Doi:10.1501/nuclear_0000000012
View : 27 | Download : 2
Publication Date : 2015-06-20
Article Type : Other
Abstract :The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.Keywords : Radiation effects, Si3N4 MIS capacitor, Interface states, Series resistance