- Gazi University Journal of Science
- Vol: 27 Issue: 3
- Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measuremen...
Analysis of Barrier Height and Carrier Concentration of MOS Capacitor Using C-f and G/ω-f Measurements
Authors : Adem Tataroğlu, G. Güven, S. Yilmaz, A. Büyükbaş
Pages : 909-915
View : 10 | Download : 3
Publication Date : 2014-08-20
Article Type : Research
Abstract :Capacitance ( C) and conductance (G/ω) measurements of metal-oxide-semiconductor (MOS) capacitors with Si3N4 dielectric deposited on Si were investigated in the frequency range of 1 kHz to 1 MHz at room temperature. The values of measured C and G/ω of MOS capacitor decrease with the increasing frequency . The 1/C2-V curves are linear in the wide voltage region for each frequency . This linearity of the curves is attributed to the uniformity of the donor concentration in the depletion region. Also, the barrier height ( F B ) and carrier (donor) concentration ( ND) were obtained from C-2-V characteristics. The values of the Φ B and ND decrease with the increasing frequency.Keywords : MOS capacitor, C-f and G/ω-f characteristics, Barrier height, Donor concentration