- Gazi University Journal of Science
- Vol: 17 Issue: 1
- ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISL...
ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING
Authors : Mehmet Kasap, Selim Acar, Bora Alkan
Pages : 31-35
View : 10 | Download : 4
Publication Date : 2010-08-11
Article Type : Other
Abstract :Normal 0 21 false false false TR X-NONE X-NONE MicrosoftInternetExplorer4 To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment. Key Words: Hall mobility, dislocation scattering, Kubo formulaKeywords : Hall mobility, dislocation scattering, Kubo formula