- Gazi University Journal of Science
- Vol: 30 Issue: 3
- Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures
Interface Effects of Annealing Temperatures in Al/HfO2/p-Si (MIS) Structures
Authors : Şadan Özden, Osman Pakma
Pages : 273-280
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Publication Date : 2017-09-20
Article Type : Research
Abstract :In this study, Al/HfO 2 /p-Si (MIS) structures were prepared by using the sol-gel method for three different annealing temperatures. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of these structures were investigated by taking into consideration the effect of the interfacial insulator layer and surface states (N ss ) at room temperature. All of the structures showed non-ideal I-V behaviour with ideality factor (n) in the range between 2.35 and 4.42 owing to interfacial insulator layer and surface states. The values of N ss and barrier height ( f b ) for three samples were calculated. The values of n and N ss ascend with increasing the insulator layer thickness (δ) while the values of f b decreases.Keywords : High dielectric materials, sol-gel, MIS devices