- Gazi University Journal of Science
- Vol: 30 Issue: 3
- Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films
Electrical conduction mechanisms in plasma-enhanced chemical vapor deposited SiO2 dielectric films
Authors : Halit Altuntaş
Pages : 281-287
View : 8 | Download : 5
Publication Date : 2017-09-20
Article Type : Research
Abstract :In this study, SiO 2 films with thicknesses 50 nm were grown on n -GaAs substrate by plasma enhanced chemical vapor deposition technique. To investigate the electrical transport mechanisms, Au/SiO 2 / n -GaAs (MOS) type capacitor structures were fabricated and measured current density-voltage ( J-V ) characteristics at room temperature. As a function of the applied gate voltage, Schottky emission, Frenkel-Poole emission, and trap-assisted tunneling were found as dominant current transport mechanisms under depletion mode. The obtained trap levels were attributed to defects related with the Ga vacancies formed at the SiO 2 /GaAs interface.Keywords : PECVD, SiO2, Frenkel-Poole emission, Dielectric