- Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi
- Vol: 27 Issue: 1
- Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm
Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm
Authors : Irem Alp, Bilgehan Barış Öner, Esra Eroğlu, Yasemin Çiftci
Pages : 94-112
Doi:10.16984/saufenbilder.1051252
View : 15 | Download : 7
Publication Date : 2023-02-28
Article Type : Research
Abstract :A near-ultraviolet (367-nm) InGaN light-emitting diode (LED) with 5.75 nm quantum well depth was designed and both internal/external quantum efficiency (IQE/EQE) values were optimized considering the effects of non-radiative recombination rates and possible fabrica-tion errors. Firstly, the IQE of the design was enhanced by a genetic algorithm code which was developed particularly for this study. Distributed Bragg Reflectors and optional ultra-thin 1nm AlN interlayer were also used to increase overall light extraction efficiency. Then, alloy and doping concentration effects on wavelength-dependent optical and structural parameters were analyzed via the CASTEP software package based on density functional theory to pre-sent a more detailed and realistic optimization. The relatively great values of 42.6% IQE and 90.2% LEE were achieved. The final structure with 1.00 mm × 1.00 mm surface area requires only 200 mW input power to operate at 3.75 V.Keywords : Light emitting diodes (LEDs), UV-LEDs, near UV devices, solid state devices, GaN-based devices