- Balkan Journal of Electrical and Computer Engineering
- Vol: 7 Issue: 1
- A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices
A Generic Circuit Model for Memristor Based One Diode-One Resistor Devices
Authors : Fatih Gül
Pages : 15-19
Doi:10.17694/bajece.457395
View : 15 | Download : 7
Publication Date : 2019-01-31
Article Type : Research
Abstract :Memristor-based resistive random access memory (RRAM) devices are very good competitors for next generation non-volatile crossbar memory applications. The sneak paths problem is one of the main constraints in fabricating crossbar memory devices. The one diode-one resistor (1D1R) structure design is effective for suppressing the sneak paths problem. Suitable circuit models are needed to simulate semiconductor structures. A general circuit model for memristor-based one diode-one resistor structures is proposed in this work. The Simulation Program with Integrated Circuit Emphasis (SPICE) environment was used to simulate the designed circuit. Well-known mathematical models such as those of Strukov, Biolek, Joglekar, Prodromakis and Zha were used to simulate the memristor component of the circuit. The current-voltage characteristics were obtained for different mathematical models. All results were compatible with the expected characteristics. The best fit characteristics were acquired using the Zha and Strukov models.Keywords : Memristor, 1D1R, Resistive random access memory (RRAM), Circuit model